dopants

简明释义

英[/ˈdəʊpənts/]美[/ˈdoʊpənts/]

渗染剂

英英释义

单词用法

同义词

反义词

例句

1.Effects of different dopants and sintering temperature on the morphology of alumina crystallites were observed in detail by using light scattering observation apparatus, SEM, EDX and XRD.

用光学显微镜、电子扫描显微镜、能谱及X射线衍射分析，比较详细地观察了各种掺杂物和温度对氧化铝晶体形貌的影响。

2.This paper describes the data character of semiconductor dopants and the quality control method.

本文讨论半导体掺杂薄层的数据特性和质量管理方法。

3.The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.

研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。

4.In order to improve radiation resistivity, the elements with smaller atomic number should be selected as dopants in both core and cladding of the fiber.

指出选用原子序数小的元素作光纤掺杂剂会有利于光纤抗辐照性能的提高。

5.If you look at metallurgical methods you'll find that they need energy-intensive melting and crystallization processes and special treatments to remove dopants which are connected with yield losses.

如果你考虑冶金的方法你将会发现，它们需要高能的熔融、结晶处理和要特别处理排除与成品损失有关的掺杂物。这种方法可达到的质量与气相处置方法相比仍然是非常低的。

6.The active element zone is IC is matched with several active elements and the P-N joint zone is finished by ionic layout different type of dopants.

集成电路内有主动元件区，配置复数个主动元件。P-N接合区以离子布植不同型态的掺质而完成。

7.The initial experiments on and analysis of sheet resistance, contact, photomask alignment, line width, and correlations between device parameters and dopants have been made.

对薄层电阻、接触、光掩模对准、线条宽度、器件参数与掺杂的相关性等内容进行了初步试验和分析。

8.Other dopants have also been studied.

其它掺杂剂也在研究中。

9.In semiconductor manufacturing, different types of dopants 掺杂剂 are used to modify the electrical properties of silicon.

在半导体制造中，不同类型的dopants掺杂剂用于改变硅的电气特性。

10.The efficiency of solar cells can be improved by using specific dopants 掺杂剂 during the production process.

在生产过程中使用特定的dopants掺杂剂可以提高太阳能电池的效率。

11.Researchers are studying how different dopants 掺杂剂 affect the performance of lithium-ion batteries.

研究人员正在研究不同的dopants掺杂剂如何影响锂离子电池的性能。

12.The introduction of dopants 掺杂剂 can significantly alter the band gap of materials.

引入dopants掺杂剂可以显著改变材料的带隙。

13.Certain dopants 掺杂剂 can enhance the conductivity of metals at room temperature.

某些dopants掺杂剂可以增强金属在室温下的导电性。

作文

In the realm of semiconductor physics and materials science, the term dopants refers to specific impurities that are intentionally added to pure semiconductors to modify their electrical properties. The process of doping is crucial for the creation of various electronic components, including diodes, transistors, and integrated circuits. By introducing dopants, engineers can enhance the conductivity of semiconductors, allowing them to perform efficiently in electronic devices. The most common dopants used in silicon, the most widely used semiconductor material, are phosphorus and boron. Phosphorus acts as an n-type dopant, meaning it adds extra electrons to the silicon lattice, which increases its negative charge carriers. On the other hand, boron functions as a p-type dopant, creating 'holes' or positive charge carriers in the silicon structure. This ability to control the type and concentration of charge carriers is fundamental in designing semiconductor devices that meet specific performance criteria. Doping can be performed through various methods, such as ion implantation and diffusion. In ion implantation, ions of the dopants are accelerated and directed into the semiconductor material, allowing for precise control over the depth and concentration of the dopants. Diffusion, on the other hand, involves placing the semiconductor in a gas or solid source of dopants at high temperatures, enabling the dopants to penetrate the silicon lattice over time. Both methods have their advantages and are selected based on the desired outcome in the semiconductor fabrication process. The impact of dopants on semiconductor behavior cannot be overstated. Without doping, pure silicon would have limited conductivity, making it unsuitable for most electronic applications. The introduction of dopants allows for the creation of p-n junctions, which are essential for the operation of many electronic devices. These junctions form the basis for diodes, which allow current to flow in one direction while blocking it in the opposite direction. Similarly, transistors, which are the building blocks of modern electronics, rely on the controlled doping of semiconductors to switch and amplify electrical signals. Moreover, the ongoing advancement in technology has led to the exploration of new dopants and doping techniques. Researchers are investigating alternative materials and methods to improve the performance of semiconductors further. For instance, the use of graphene and other two-dimensional materials as dopants is being studied for their potential to enhance the properties of traditional semiconductors. In conclusion, dopants play a pivotal role in the field of electronics by allowing for the manipulation of semiconductor properties. Their ability to enhance conductivity and create essential junctions is fundamental to the functioning of modern electronic devices. As technology continues to evolve, the study of dopants and their applications will remain a vital area of research, driving innovation in the semiconductor industry and beyond.

在半导体物理和材料科学领域，术语dopants指的是故意添加到纯半导体中的特定杂质，以修改其电气特性。掺杂过程对各种电子组件的创建至关重要，包括二极管、晶体管和集成电路。通过引入dopants，工程师可以增强半导体的导电性，使其在电子设备中高效运行。 最常用的硅的dopants是磷和硼。磷作为n型dopant，意味着它向硅晶格中添加额外的电子，从而增加其负电荷载流子。另一方面，硼作为p型dopant，在硅结构中创造“孔”或正电荷载流子。这种控制载流子类型和浓度的能力是设计满足特定性能标准的半导体设备的基础。 掺杂可以通过多种方法进行，例如离子注入和扩散。在离子注入中，dopants的离子被加速并定向进入半导体材料，从而精确控制dopants的深度和浓度。另一方面，扩散涉及将半导体置于高温下的气体或固体源的dopants中，使dopants随着时间的推移渗透到硅晶格中。这两种方法都有其优点，并根据半导体制造过程中所需的结果进行选择。 dopants对半导体行为的影响不容小觑。如果没有掺杂，纯硅的导电性有限，使其不适合大多数电子应用。引入dopants使得p-n结的形成成为可能，这对于许多电子设备的操作至关重要。这些结构成了二极管的基础，二极管允许电流朝一个方向流动而阻止反方向流动。同样，晶体管作为现代电子的基石，依赖于半导体的受控掺杂来切换和放大电信号。 此外，技术的不断进步导致对新dopants和掺杂技术的探索。研究人员正在研究替代材料和方法，以进一步改善半导体的性能。例如，石墨烯和其他二维材料作为dopants的使用正在被研究，以提高传统半导体的特性。 总之，dopants在电子领域中发挥着关键作用，通过允许操纵半导体特性。它们增强导电性和创建基本结的能力是现代电子设备功能的基础。随着技术的不断发展，对dopants及其应用的研究将继续成为一个重要的研究领域，推动半导体行业及其他领域的创新。